| PART |
Description |
Maker |
| 2SC2335-15 |
SILICON POWER TRANSISTO
|
Renesas Electronics Corporation
|
| 2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
High-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier Transistor (120V, 50mA)
High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier Transistor (32V , 0.3A)
Medium Power Transistor (32V, 1A)
Power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC
ROHM[Rohm]
|
| DZTA42 |
Medium Power Bipolar Transistors
|
Diodes, Inc.
|
| 2SD1468S 2SD1834 2SD1834T100W 2SD1468STPR 2SD1468S |
1000 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
BJT
Low-Power, Single/Dual-Level Battery Monitors with Hysteresis 晶体
|
ROHM
|
| SST4401 MMST4401 |
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
NPN Medium Power Transistor
|
Rohm
|
| 2SB1183 2SB1239 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
Darlington connection for high DC current gain.
|
ROHM[Rohm]
|
| 2SD2144S 2SD2114K 2SD2114S |
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
20V,0.5A high-current gain medium power transistor
|
ROHM
|
| RM30TA-H RM30TPM-M RM30TA-M |
MITSUBISHI DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation
|
| 2SB1260 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
|
ROHM
|
| 2SB1236 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
|
ROHM
|
| QSX5 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
|
ROHM
|
